Dow Prepares for the 2018 SPIE Advanced Lithography Conference

January 29,2018

The SPIE Advanced Lithography conference is an annual highlight for many in the global lithography community, bringing together industry leaders for valuable training and discussions on the latest research across seven distinct conferences. Technical leaders from Dow’s Litho Technologies business are currently making preparations to share some of Dow’s research as part of the Optical Microlithography, Extreme Ultraviolet Lithography, and Advances in Patterning Materials and Processes conferences.

SPIE Advanced Lithography 2018 will be held February 25 - March 1 at its standard location, the San Jose Convention Center in San Jose, California. Read on for a preview of what you can learn from Dow’s team at the event:

Optical Microlithography Conference

10587-6: The Determination of Roughness Power Spectral Density Curves as a Function of Resist Parameters
Tuesday, February 27; Session 2 (Advanced Process Control I)
Charlotte Cutler, James W. Thackeray, Jason DeSisto, Choong-Bong Lee, Mingqi Li, Emad Aqad, Xisen Hou, Tomas Marangoni, Joshua Kaitz, Rochelle Rena
In collaboration with Chris Mack of Fractilia, LLC

Linewidth roughness (LWR) remains a difficult challenge for improvement in most resist materials. In this paper, we intend to focus on the impact of key components of LWR by analyzing the power spectral density (PSD) curves that can be obtained using Fractilia’s MetroLER computational software. We will study systematic changes to ArF resist formulations and correlate these changes on the overall PSD curves. In this manner, we can extract LER/LWR values as well as resist correlation length and the low/high-frequency roughness components. To achieve quality data, we used rectangular scanned SEM images. By making systematic changes to the ArF resists, we can determine the key impacts of various controllable resist factors on the PSD. Through this systematic analysis, we can deconvolute LWR improvements.

See the full program for the Optical Microlithography Conference.

Extreme Ultraviolet (EUV) Lithography Conference

10583-40: Shot Noise, LER and the RLS Trade-off: A Retrospective (Invited Paper)
Wednesday, February 28; Session 11 (Special Session: Three Points on Shot Noise, 100 Years Later)
Peter Trefonas III, in collaboration with Robert L. Brainard of SUNY CNSE/SUNYIT and Gregg M. Gallatin of Applied Math Solutions LLC

Experiments and modelling performed in 2003-2005 investigated the effect of shot-noise, resulting from discrete absorption of photons by single atoms or molecules, on photoresist performance. Experiments on resists patterned using EUV and DUV lithography demonstrated a correlation between line edge roughness (LER) and dose, with better LER at higher dose. The explanation for this relationship is that shot-noise decreases as the number of photons absorbed at the line edge increases. An analytical model for the influence of shot noise directly predicted the (dose)-1/2 dependence of LER. Further analysis yielded the “Resolution, LER and Sensitivity (RLS) Triangle,” which predicts that good resolution, small LER, and good sensitivity cannot exist simultaneously. To gain further insight into RLS, we simulated shot noise resulting from exposure and acid diffusion at the mask edge. The analytical model and simulation results both indicate the same dependence of LER on dose and acid diffusion length.

See the full program for the Extreme Ultraviolet (EUV) Lithography Conference.

Advances in Patterning Materials and Processes Conference

10586-20: The Development of an SC1 Removable SiARC Underlayer
Tuesday, February 27; Session 7 (Hardmasks and Underlayer)
Shintaro Yamada, Iou-Sheng Ke, Charlotte Cutler, Cui Li, Paul LaBeaume, Daniel Greene, Popere Bhooshan, Chris Sullivan, JoAnne Leonard, Suzanne Coley, Sabrina Wong, Jim Cameron, Michael Clark Jr., Thomas Fitzgibbons

A trilayer stack of spin-on-carbon (SOC), silicon anti-reflective coating (SiARC) and photoresist (PR) is often used to facilitate high-resolution implant layers for integrated circuit manufacturing. Damage to substrates from SiARC removal using dry etching or aqueous hydrogen fluoride has increased the demand for innovative SiARC materials for implant lithography. Wet strippable SiARCs (WS-SiARCs) capable of stripping under mild conditions such as SC1 (NH4OH/H2O2/H2O) while maintaining key performance metrics of standard SiARCs is highly desirable. In this paper, we highlight the development of all silicon/organic WS-SiARC platforms capable of >300Å/min strip rate over a wide range of SC1 ratios and temperatures, both before and after dry etching. A comparison of key thin-film properties and lithographic performance between standard SiARC and WS-SiARC platforms will be presented.

10586-58: Chemical Trimming Overcoat: An Advanced Composition and Process for Photoresist Enhancement in Lithography
Tuesday, February 27; Session PS3 (Poster Session: Novel Processes)
Xisen Hou, Cong Liu, Kevin Rowell, Irvinder Kaur, Mingqi Li, Paul Baranowski, Jong Park, Cheng Bai Xu

To increase the integration density of semiconductor devices, continuous development efforts toward advanced lithography, processes such as multiple patterning methods, have been developed to achieve new critical dimension targets. However, existing advanced multiple patterning processes currently suffer from limited process window due to the poor aerial image contrast at the defocus region, along with increased process complexity and cost. Herein, we report a novel chemical trimming overcoat process as a post-lithography spin-on approach to enhance photoresist performance to not only effectively reduce critical dimension, but to facilitate a larger process window, lower line width roughness, less scum and lower defectivity. This is a versatile process that is compatible with both acrylic and polyhydroxystyrene types of photoresists, therefore allowing it to be applicable to ArF, KrF and EUV lithography.

See the full program for the Advances in Patterning Materials and Processes Conference.

 

The SPIE Advanced Lithography conference is an annual highlight for many in the global lithography community, bringing together industry leaders for valuable training and discussions on the latest research across seven distinct conferences. Technical leaders from Dow’s Litho Technologies business are currently making preparations to share some of Dow’s research as part of the Optical Microlithography, Extreme Ultraviolet Lithography, and Advances in Patterning Materials and Processes conferences.

SPIE Advanced Lithography 2018 will be held February 25 - March 1 at its standard location, the San Jose Convention Center in San Jose, California. Read on for a preview of what you can learn from Dow’s team at the event:

Optical Microlithography Conference

10587-6: The Determination of Roughness Power Spectral Density Curves as a Function of Resist Parameters
Tuesday, February 27; Session 2 (Advanced Process Control I)
Charlotte Cutler, James W. Thackeray, Jason DeSisto, Choong-Bong Lee, Mingqi Li, Emad Aqad, Xisen Hou, Tomas Marangoni, Joshua Kaitz, Rochelle Rena
In collaboration with Chris Mack of Fractilia, LLC

Linewidth roughness (LWR) remains a difficult challenge for improvement in most resist materials. In this paper, we intend to focus on the impact of key components of LWR by analyzing the power spectral density (PSD) curves that can be obtained using Fractilia’s MetroLER computational software. We will study systematic changes to ArF resist formulations and correlate these changes on the overall PSD curves. In this manner, we can extract LER/LWR values as well as resist correlation length and the low/high-frequency roughness components. To achieve quality data, we used rectangular scanned SEM images. By making systematic changes to the ArF resists, we can determine the key impacts of various controllable resist factors on the PSD. Through this systematic analysis, we can deconvolute LWR improvements.

See the full program for the Optical Microlithography Conference.

Extreme Ultraviolet (EUV) Lithography Conference

10583-40: Shot Noise, LER and the RLS Trade-off: A Retrospective (Invited Paper)
Wednesday, February 28; Session 11 (Special Session: Three Points on Shot Noise, 100 Years Later)
Peter Trefonas III, in collaboration with Robert L. Brainard of SUNY CNSE/SUNYIT and Gregg M. Gallatin of Applied Math Solutions LLC

Experiments and modelling performed in 2003-2005 investigated the effect of shot-noise, resulting from discrete absorption of photons by single atoms or molecules, on photoresist performance. Experiments on resists patterned using EUV and DUV lithography demonstrated a correlation between line edge roughness (LER) and dose, with better LER at higher dose. The explanation for this relationship is that shot-noise decreases as the number of photons absorbed at the line edge increases. An analytical model for the influence of shot noise directly predicted the (dose)-1/2 dependence of LER. Further analysis yielded the “Resolution, LER and Sensitivity (RLS) Triangle,” which predicts that good resolution, small LER, and good sensitivity cannot exist simultaneously. To gain further insight into RLS, we simulated shot noise resulting from exposure and acid diffusion at the mask edge. The analytical model and simulation results both indicate the same dependence of LER on dose and acid diffusion length.

See the full program for the Extreme Ultraviolet (EUV) Lithography Conference.

Advances in Patterning Materials and Processes Conference

10586-20: The Development of an SC1 Removable SiARC Underlayer
Tuesday, February 27; Session 7 (Hardmasks and Underlayer)
Shintaro Yamada, Iou-Sheng Ke, Charlotte Cutler, Cui Li, Paul LaBeaume, Daniel Greene, Popere Bhooshan, Chris Sullivan, JoAnne Leonard, Suzanne Coley, Sabrina Wong, Jim Cameron, Michael Clark Jr., Thomas Fitzgibbons

A trilayer stack of spin-on-carbon (SOC), silicon anti-reflective coating (SiARC) and photoresist (PR) is often used to facilitate high-resolution implant layers for integrated circuit manufacturing. Damage to substrates from SiARC removal using dry etching or aqueous hydrogen fluoride has increased the demand for innovative SiARC materials for implant lithography. Wet strippable SiARCs (WS-SiARCs) capable of stripping under mild conditions such as SC1 (NH4OH/H2O2/H2O) while maintaining key performance metrics of standard SiARCs is highly desirable. In this paper, we highlight the development of all silicon/organic WS-SiARC platforms capable of >300Å/min strip rate over a wide range of SC1 ratios and temperatures, both before and after dry etching. A comparison of key thin-film properties and lithographic performance between standard SiARC and WS-SiARC platforms will be presented.

10586-58: Chemical Trimming Overcoat: An Advanced Composition and Process for Photoresist Enhancement in Lithography
Tuesday, February 27; Session PS3 (Poster Session: Novel Processes)
Xisen Hou, Cong Liu, Kevin Rowell, Irvinder Kaur, Mingqi Li, Paul Baranowski, Jong Park, Cheng Bai Xu

To increase the integration density of semiconductor devices, continuous development efforts toward advanced lithography, processes such as multiple patterning methods, have been developed to achieve new critical dimension targets. However, existing advanced multiple patterning processes currently suffer from limited process window due to the poor aerial image contrast at the defocus region, along with increased process complexity and cost. Herein, we report a novel chemical trimming overcoat process as a post-lithography spin-on approach to enhance photoresist performance to not only effectively reduce critical dimension, but to facilitate a larger process window, lower line width roughness, less scum and lower defectivity. This is a versatile process that is compatible with both acrylic and polyhydroxystyrene types of photoresists, therefore allowing it to be applicable to ArF, KrF and EUV lithography.

See the full program for the Advances in Patterning Materials and Processes Conference.

 

Please confirm all details with the final SPIE Advanced Lithography conference program if you are attending in person.

We'd be happy to meet with you during the conferences or exhibition. If you would like to meet with someone from Dow Electronic Materials during the event, please contact your account representative or contact us to schedule a meeting. We look forward to seeing many of you in San Jose!