EKC Photoresist & Residue Removers

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Advanced WLP Resist Stripping

Advanced WLP Resist Stripping

This paper outlines the advances made by EKC in developing a solution for WLP resist stripping based on the globally established HDA® technology.

Innovative Photoresist Removal Technology for Wafer Level Packaging

Innovative Photoresist Removal Technology for Wafer Level Packaging

This paper describes the compatibility and stripping performance achieved with an innovative photoresist removal technology on various sample wafers with liquid and dry film photo resist.

Microbump Creation System for Advanced Packaging Applications

Microbump Creation System for Advanced Packaging Applications

The combination of a high resolution dry film and effective remover chemistry that strips the photoresist cleanly from the wafers offers customers a viable process for producing micro-bump technologies.

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50ºC.

TiN Metal Hardmask Etch Residue Removal with Mask Pullback and Complete Mask Removal for Cu Dual Damascene Device

TiN Metal Hardmask Etch Residue Removal with Mask Pullback and Complete Mask Removal for Cu Dual Damascene Device

IC companies use TiN as a reactive-ion etching (RIE) hardmask to achieve improved selectivity to low-k materials in Cu dual damascene device fabrication for the 32 nm node and beyond.

WLP Photoresist Removers & TSV Cleaners

WLP Photoresist Removers & TSV Cleaners

Water rinseable semi-aqueous remover to strip in half the time of competitive strippers, capable of removing + 100 micron thick film.

Copper PCMP Cleaning Applications

Copper PCMP Cleaning Applications

This single chemistry solution can be used with acidic or basic barrier slurries; provides very low defectivity on copper and low-k surfaces and more.

Removing Post Etch Residues Formed at BEOL Cu Integration

Removing Post Etch Residues Formed at BEOL Cu Integration

The components in EKC520™ have been optimized to selectively convert insoluble post etch residues into derivatives that are rapidly removed by dissolution in water, without CD loss, Cu corrosion or increase dielectric permittivity.

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