Photoresists

ArF Dry Resist

ArF Dry Resist

DuPont's positive tone ArF (193 nm) dry photoresists have been optimized for trench and line and space (L/S) applications through pitch.

Features

  • 90 nm 1:1 line and space
  • 90 nm ISO line

Benefits

  • Very large process window at various pitches
  • Excellent profile
  • Good ID bias
  • Good etch resistance
Image Component

1a: 90 nm L/90 nm S

Image Component

90 nm ISO L

Figure 1: 170 nm on AR™ 26N/AR™ 4124 Fast Etch, 0.93NA, Ann. s: 0.72/0.49 , PSM mask, SB/PEB=125°C/110°C, PS=27.4mJ