Innovators in materials for today’s power electronic devices, DuPont Electronics & Imaging is your reliable global source of leading edge, production proven, high crystal quality silicon carbide (SiC) wafers and epitaxy services.
DuPont is a vertically integrated SiC wafer supplier with technology and manufacturing expertise from crystal growth through wafer fabrication and epitaxial growth.
Our unique SiC wafer grading structure sets clear standards for specifying tolerances on defects, such as micropipe density (MPD) and dislocation density (EPD, TED, TSD and BPD). This grading structure allows power device designers to more confidently pinpoint the SiC substrate that optimizes the performance and cost of their next-generation power device design.
We offer both 100 and 150 mm SiC wafers, as well as SiC epitaxy service (n- and p-type) to support various companies within the entire power electronics value chain. Specifications can be tuned to customer needs, with standard thicknesses up to 20 µm.
Prime Grade Portfolios
All SiC wafers in DuPont Electronics & Imaging's 100 mm and 150 mm Prime Grade portfolios deliver consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.
Prime Standard SiC wafers offer an attractive option for balancing performance and cost when designing simpler SiC power electronic components, such as Schottky or Junction Barrier Schottky diodes, with low to medium current ratings.
Prime Select SiC wafers deliver more stringent tolerances for defects, making them suitable for more demanding SiC devices like pin diodes or switches.
Prime Ultra SiC wafers deliver the lowest defect densities and a tightened wafer resistivity distribution for the design of today's most advanced high-power SiC electronic devices, including metal oxide semiconductor field effect transistors (MOSFETs), junction field effect transistors (JFETs), insulated gate bipolar transistors (IGBTs), and bipolar junction transistors (BJTs). In addition, the superior substrate quality in this tier can benefit high-voltage (3.3 kV and higher) and high-current device designs.
The unique properties of silicon carbide (SiC) wafers and epitaxy offer the benefit of faster switching at higher power and increased energy efficiency, often eliminating expensive cooling systems and enabling improved performance. Potential applications include: