Our industry-leading materials are used widely as inter-level dielectrics in multilevel metal integrated circuit (IC) designs. They may also markedly improve topside planarity when applied prior to final passivation. Unlike organic materials, our flow able dielectric polymers contains only Si, O, and H, making integration, in many cases, much easier. Plus, they offer a lower dielectric constant and excellent high aspect gap fill, which becomes increasingly important as feature dimensions shrink. Additionally, the material can also provide corrosion resistance in some non- electronic applications.
Available in a choice of carrier solvent systems, spin-on dielectric materials from Dow also enable controlled film thickness, and deliver excellent gap fill and very low defect density.