TiN Metal Hardmask Etch Residue Removal with Mask Pullback and Complete Mask Removal for Cu Dual Damascene Device

IC companies use TiN as a reactive-ion etching (RIE) hardmask to achieve improved selectivity to low-k materials in Cu dual damascene device fabrication for the 32 nm node and beyond. However, a disadvantage with this approach is that an overhang mask is produced after RIE, which could result in voids in the subsequent deposition steps of barrier metal, Cu seed layer and Cu filling. Therefore, it is beneficial to etch the TiN mask in such a way as to form a pullback/rounded corner morphology to eliminate mask overhang and ensure reliable metal deposition.

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