AR™ 201 Organic Gap Filling Material
AR™ 201 is an organic gap filling material. It can fill extremely narrow trench without voids and provides an excellent solution for advanced devices with FinFET structures. AR™ 201 can also work as an anti-reflectant and reduce reflectivity for KrF and ArF processes.
Features
- Optimal n&k values for hyper numerical aperture (NA) exposure
- High etch rate
- Good compatibility with resist
- Excellent coating property
- Good EBR/RRC solvent compatibility
Benefits
- Improves critical dimension uniformity (CDU)
- Improves lithographic process margins
- Improves etch process margins
Figure 1: Gap Fill at High Aspect Ratio Topography: Aspect Ratio=10
Conventional SOC
AR™ 201
Figure 2: Excellent Gap Fill and Planarization
Figure 3: AR™ 201 Lithographic Performance at 200 nm 1:1 L/S
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