Chemical mechanical planarization (CMP) is a critical enabling technology in advanced integrated circuit manufacturing. Defects and residues either deposited or formed during the planarization process that can adversely affect product yield are subsequently removed in the post-CMP cleaning step. Aqueous formulations employed for post-CMP (PCMP) cleaning are designed to protect the planarized metals and dielectrics preventing metal corrosion while providing a smooth defect free wafer surface.
DuPont™ PCMPSolv™ 5600 Series is a high volume, post-CMP copper interconnect cleaner required in the manufacturing of advanced semiconductor devices. It features high pH formulations for Cu BEOL and can be used with various barrier slurries.
It offers the following capabilities:
PCMP5615 is an advanced PCMP formulation in high volume manufacturing, low cost-of-ownership copper post-CMP cleaner featuring an alkaline pH formulation for Cu BEOL. This single chemistry solution can be used with acidic or basic barrier slurries; provides very low defectivity on copper and low-k surfaces; offers enhanced compatibility with sensitive low-k and ULK films; compatible with Co, and Ru applications, prevents the formation of circular ring defects. PCMP 5615 offers flexibility in dilution to meet low cost-of-ownership targets for all equipment cleaning modules.
PCMP5675 is an advanced PCMP formulation in high volume manufacturing, low cost-of-ownership copper post-CMP cleaner featuring an alkaline pH formulation for Cu BEOL. This single chemistry solution can be used with acidic or basic barrier slurries; provides very low defectivity on copper and low-k surfaces; offers enhanced compatibility with sensitive low-k and ULK films; compatible conventional Ta/TaN barriers, prevents the formation of circular ring defects. PCMP5675 also features a Cu undercut mechanism to improve defect lift-off from Cu surface. PCMP5675 offers flexibility in dilution to meet low cost-of-ownership targets for all equipment cleaning modules, especially for mature logic technology nodes or memory applications.
PCMP5650 is an advanced PCMP formulation in high volume manufacturing, low cost-of-ownership copper post-CMP cleaner featuring an alkaline pH formulation for Cu BEOL. This single chemistry solution can be used with acidic or basic barrier slurries; provides very low defectivity on copper and low-k surfaces, offers enhanced compatibility with sensitive low-k and ULK films, prevents the formation of circular ring defects, and is compatible with Co and Ru applications, PCMPSolv™ 5650 was specially designed for technology below 14nm, where organic defects control and minimal Cu and Co corrosion are required. PCMPSolv™ 5650 is also a highly concentrated chemical to meet low cost-of-ownership targets for all equipment cleaning modules.
DuPont™ PCMPSolv™ 3200 series are high volume, post-CMP Tungsten interconnect cleaners for the manufacturing of advanced semiconductor devices, both for BEOL and middle-end-of-line (MEOL) applications such as Co and TiN.
PCMP3205 offers a manufacturing-proven post-CMP cleaner featuring a weakly acidic pH formulation for W CMP. This single chemistry solution is designed to be used in the buff platen or pre-clean module of CMP tools, is compatible with W, and provides very low defectivity on TEOS or Silicon Nitride films. PCMP3205 focuses on reducing organic defectivity before applying a PCMP brush process.
PCMP3210 offers a manufacturing-proven, low cost-of-ownership post-CMP cleaner featuring an alkaline pH formulation for W CMP. This single chemistry solution is designed to be used in the brush modules of CMP tools and is compatible with both W and Co, and provides very low defectivity on TEOS or Silicon Nitride films. PCMP3210 also incorporates dissolution agents for TiO2 debris originating from TiN barriers. PMCP3210 has a long list of material compatibility, including, Cu, Co, W, Mo, Ta, Ti, TiN, TaN, SiOx, SiNx, SiC, and is referred as a universal PCMP clean solution. PCMP3210 offers flexibility in dilution to meet low cost-of-ownership targets for all equipment cleaning modules.
DuPont™ PCMPSolv™ 2000 is a new series of cleaners designed for cleaning semiconductor wafers after use of ceria CMP slurries required in FEOL, MEOL and memory array layers.
PCMPSolv™ 2000 is a low cost-of-ownership post-CMP cleaner series featuring an acidic pH formulation for use after ceria slurries. This single chemistry solutions are designed to clean ceria slurry particles, as well as minimizing residual cerium ions post-CMP. They are designed to be used with conventional ceria slurries, as well as the newest ceria slurries, with particles either positively or negatively charged. PCMPSolv™ 2000 series offers the capability to eliminate post-CMP wet bench cleans, such as SPM or HF.
Aqueous formulations employed for post-CMP cleaning are designed to protect the planarized metals and dielectrics preventing metal corrosion while providing a smooth defect free wafer surface.
Aqueous & semi-aqueous organic mixtures formulated to effectively remove residues from substrate surfaces after via, poly and metal etch processes.
Strippers to remove photoresist used during the lithography process
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