AR™ 19G2-612 193nm ANTI REFLECTANT

AR™ 19G2-612 193nm ANTI REFLECTANT

DuPont’s AR™ Fast Etch Organic BARCs are based on polymers that contain a chromophore to reduce substrate reflectivity and include oxygen-rich monomers that etch quickly during the pattern transfer step. The fast etch properties of these products and the easy removal without significant loss of the resist film thickness are key to making advanced integrated circuits.

Solutions
  • Anti-Reflectants & Functional Sublayers
 
 
 

Features & benefits

  • AR™ Fast Etch Organic BARCs etch 30% faster than photoresists, compared to conventional BARCs that have the same etch rate as photoresists.
  • AR™ Fast Etch Organic BARCs etch quickly during the pattern transfer step preserving (thinner) resist thickness which is necessary for better resolution.
  • DuPont’s fast etch technology minimizes resist consumption, reduces line edge roughness variations and reduces critical dimension (CD) changes after pattern transfer.
  • Maintaining the pattern fidelity and preserving the resist pattern thickness of integrated circuits is essential for good electrical performance in high yield and for high volume manufacturing.
  • Significantly faster etch rates than vacuum deposited inorganic films
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    Product Details

    Fabric/material

    ARCS

    Design

    AR 19G2-612 193NM

    Seam

    AR19G2-612

    Packaging

    ARCS

    Hazard

    Coated Material

    ARCS

    Features

    ARCS

     
     
     
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