DuPont's positive tone ArF (193 nm) dry photoresists have been optimized for trench and line and space (L/S) applications through pitch.
1a: 90 nm L/90 nm S
90 nm ISO L
Figure 1: 170 nm on AR™ 26N/AR™ 4124 Fast Etch, 0.93NA, Ann. s: 0.72/0.49 , PSM mask, SB/PEB=125°C/110°C, PS=27.4mJ