When it comes to materials used to manufacture semiconductors, most people are familiar with copper, but there are a number of silicone materials that are essential to key processes such as chemical vapor deposition (CVD)/atomic layer deposition (ALD) gas/precursor, and spin-on dielectrics (SOD).
As the semiconductor industry broadens its adoption of copper interconnects, the needs increase for a copper-diffusion barrier with a low dielectric constant – that is, a small dielectric constant relative to silicon dioxide (SiO2) and silicon nitride (SiN).
Low-k material implementation is one of several strategies used to allow continued scaling of microelectronic devices to remain on the path of Moore’s Law.
Moreover, as pattern resolution becomes narrower, chipmakers’ need increases for thinner films made of silicon oxide (SiO) or silicon nitride through the ALD process. Both types of thin films require a precursor processing step that uses specialty silicon materials.
This is an area where DuPont excels.
We have the industry’s largest market share for semiconductor silicone materials, and we have had products in the space for more than 20 years. These include trimethylsilane (3MS), tetramethylsilane (4MS), flowable oxide (FOx) and hexachlorodisilane (HCDS).
Our secure, high-quality supply of silicon-based CVD precursor materials for the global semiconductor manufacturing industry includes SiO2, silicon carbide (SiC), silicon oxycarbide (SiCO) and SiNx films.
Our spin-on dielectrics are used widely as inter-level dielectrics in multilevel metal integrated circuit (IC) designs.
If you demand high-quality, customer-endorsed semiconductor silicone material solutions with a proven history and stable supply to ensure your future requirements will be met, call on DuPont. We are ready to help.
Materials essential to key processes such as chemical vapor deposition (CVD)/atomic layer deposition (ALD) gas/precursor, and spin-on dielectrics (SOD).
Silicon precursors are high-purity gas or liquid materials used in key steps during the manufacture of semiconductor devices.
Spin-on dielectric materials to make multilevel metal ICs more planar, reducing process complexity and cost.
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