With production-proven metallization processes for high- and low-speed plating, DuPont Electronics & Imaging’s copper pillar products meet the strict requirements for today’s fine-pitch Cu pillar, Cu stud, and Cu µpillar processes used in advanced wafer-level packaging architectures, from flip-chip processes, to 2.5D and 3D integration schemes. Its additives and high-purity formulation address a wide process window, and are designed to work in perfect harmony with our under-bump metallization (UBM) and tin-silver capping chemistries to provide a seamless solution.
DuPont Electronics & Imaging Cu plating chemistries’ stand-out features include:
Copper (Cu) pillars offer a finer-pitch alternative to solder bumps to form interconnects between the chip and the package substrate, interposer, or other chips in 3D integration schemes. They are fabricated on top of under bump metallization (UBM) using photolithography and deposition processes and are capped with tin-silver to form the electronic interconnect.
As pitch requirements continue to shrink, copper pillars can enable higher-density designs while maintaining consistent bump heights. The next-generation technology will feature pillars as narrow as 10 to 30 µm. DuPont Electronics & Imaging’s Cu plating chemistries are designed to be ultra-pure and balanced to deliver the optimal intermetallic layer at the interface and void-free pillars at consistent heights.
Our production-proven Cu pillar formulations work in perfect harmony with our under-bump metallization (UBM) and tin-silver capping chemistries, to provide a seamless solution for all your Cu pillar needs.
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