Anti-Reflectants & Functional Sublayers


Anti-Reflectants & Functional Sublayers

Addressing Advanced Lithography Challenges

DuPont’s complete line of anti-reflectant coatings and functional sublayer products include bottom anti-reflective coatings (BARCs), spin-on-carbons (SOCs) and extreme ultraviolet (EUV) underlayers. They are formulated to address advanced lithography challenges posed by the critical dimensions of today’s advanced technology nodes and 3D structures, improving throughput and enabling higher resolution to 20nm line pitches.

  • Anti-reflective coatings and sublayers – BARCs and SiARCs, and SOCs – are used to boost the effectiveness of lithography by widening and improving the process and reflectivity windows:

    • BARCs reduce reflective light during the exposure step, improving the reflectivity control of the resist. They also prevent substrate damage caused by wet processes.
    • SiARC materials functions under the resist to control optical imaging while also acting as an etch barrier to manage the etch pattern.
    • SOCs act as planarizing material. They create a high carbon layer that helps control etch  properties.

Lithography Materials and Services

  • Anti-Reflectants & Functional Sublayers

    Anti-reflective coatings and sublayers boost the effectiveness of lithography by widening and improving the process and reflectivity windows.

    An organic gap filling material for extremely narrow trenches

    A family of cross-linkable BARCs that can etch 30% faster than photoresists

    AR™ 10L is an organic, thermally cross-linking bottom anti-reflectant coating (BARC) for 248 nm (KrF) photoresists. It is designed to provide a universal anti-reflective surface for high- and low-temperature resist platforms and offers excellent compatibility with most ESCAP HYBRID and Acetal resists.

    AR™ 137 is an organic bottom anti-reflectant coating (oBARC) for immersion lithography. It is designed to provide excellent optical parameters to minimize reflection through angles for hyper numerical aperture (NA) immersion exposure.

    AR™ 254 is an organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist. It has excellent gap filling and planarizing properties that are key requirements for advanced semiconductor devices having FinFET structures. AR™ 254 has a high etch rate to reduce substrate damage and optimal optical parameters to minimize reflectance.
  • Advanced Overcoats

    Used in conjunction with photoresists, DuPont’s advanced overcoat materials are designed to prevent defects and improve the lithography process window, enabling finer feature patterns.

  • Photoresists

    DuPont’s robust, production-proven photoresist product line offers materials options that meet the requirements across generations of lithography processes.

  • Ancillary Lithography Materials

    DuPont’s roots run deep in its production-proven line of ancillary lithography products. From developers, removers, and other enhancement chemistries, we support a total lithography solution.

  • Electronic Grade Polymers | DuPont Electronic Solutions

    DUV and 193nm photoresist performance begins with the polymer, and DuPont electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.

  • Metrology & Imaging Services

    We offer services such as defect testing or patterning wafers


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