DuPont offers a robust, production-proven photoresist product line with materials options that meet the requirements across generations of lithography processes from 365nm down to 13.5nm wavelengths, and exposures that achieve features from 280nm to 20nm.
The quest to achieve ever smaller technology nodes means photoresists must offer higher and better resolution with a wider depth of focus, with fewer defects. At the same time, legacy nodes rely on tried and true formulations. From our i-line/g-line, to our 193 and KrF product families, DuPont has photoresists to match your needs.
When combined with DuPont’s etching, developing and ancillary products, you get a total materials solution to support your semiconductor manufacturing processes.
Our broad portfolio also allows us to tailor photoresists to meet specific customer specifications.
Our legacy i-Line (365nm) photoresists are formulated to support different thickness requirements while achieving high resolution and low defects.
Our DUV (248nm) photoresists show excellent product performances with low defects for various applications.
EPIC™ Photoresists are a series of 193 resists widely used for 193 processes with and without topcoats. DuPont’s EPIC™ IM Resist is designed for the unique environment created by immersion lithography, in which water between the lens and the wafer enables exposure of finer patterns.
If microlithography is the heart of the semiconductor chip manufacturing, the photoresist is its life blood. Photoresists are materials coated on semiconductor wafers that allow circuitry patterns to be imaged on the wafer. In the exposure step, light passes through the image mask and projects the image onto the photoresist material, creating the image pattern.
DuPont’s robust, production-proven photoresist product line offers materials options that meet the requirements across generations of lithography processes.
Positive tone ArF (193 nm) dry photoresists optimized for trench and line/space applications
Positive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivity
Positive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibility
Used in conjunction with photoresists, DuPont’s advanced overcoat materials are designed to prevent defects and improve the lithography process window, enabling finer feature patterns.View Details
Anti-reflective coatings and sublayers boost the effectiveness of lithography by widening and improving the process and reflectivity windows.View Details
An organic, thermally cross-linking BARC for 248 nm photoresists
An organic bottom anti-reflectant coating (oBARC) for immersion lithography
An organic gap filling material for extremely narrow trenches
An organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist
A family of cross-linkable BARCs that can etch 30% faster than photoresists
DuPont’s roots run deep in its production-proven line of ancillary lithography products. From developers, removers, and other enhancement chemistries, we support a total lithography solution.View Details
DUV and 193nm photoresist performance begins with the polymer, and DuPont electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.View Details
We offer services such as defect testing or patterning wafersView Details