Copper, nickel and lead-free metallization for next-gen devices and applications

August 15, 2015


Everywhere we look, from semiconductor industry trade journals to general interest media, the Internet of Things (IoT) is a hot topic. Gartner has placed the IoT firmly at the peak of the Hype Cycle for trending technologies, and it has become the poster child for the future of the semiconductor and related industries. Predictions for the number of connected devices we will need by 2020 range from 26 – 36B. Gartner predicts we will need 100K wafers/month to meet these requirements.

Many of these devices require more functionality crammed into smaller and thinner packages with increasingly advanced chip designs. As such, new materials are required to meet the challenging requirements of the new packaging solutions.

For example, next-generation plating products developed for flip-chip and 3-D packaging applications must meet more challenging performance requirements. Device architectures are decreasing in size, and die patterns are becoming more complex in die design and layout. Additionally, the drive to increase throughput by increasing the electrodeposition rates has increased plating chemistries standard performance metrics. Because of this, copper pillar, nickel and SnAg as a lead-free solder that can electroplate high quality deposits are needed to manufacture highly-reliable, efficient and low-cost microelectronic devices. Furthermore, as the industry moves from traditional C4 SnAg bumping processes to copper pillar with SnAg caps, a premium is placed on intermetallic integration and compatibility with minimal pre- and post-reflow defects.

To learn how Dow Electronic Solutions has optimized its family of advanced electronics packaging metallization products, which includes Solderon™ BP TS 6000 Tin-Silver, Intervia™ 9000 Copper and Nikal™ BP 2000 Nickel chemistries, view this presentation presented at the 2015 IMAPS International Device Packaging Conference.

View the presentation

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